Abstract:The operational amplifier (op amp) design in very deep submicron technology endure the barriers like exponential increase in leakage current, process variations, quantum-mechanical tunneling, and lithographic limitations. This results in low gain stages and decreased impedance thereby degrading the performance of op amp. In order to provide improvements in electrostatics over complementary metal oxide semiconductor (CMOS) and to sustain Moore's law in near future, various advanced and beyond CMOS devices are evolved over the period such as ultra-thin body single or multiple-gate field effect transistors (MG-FETs), FinFET, dynamic threshold MOSFET, silicon on insulator (SOI) FETs, strained silicon and, carbon nanotube field effect transistors (CNFET). CNFET is one of these embryonic technologies evolved through the contemporary innovations which provides very high throughput, due to near ballistic transport of charge carriers and large mean free path. Very low leakage current and high output resistance of CNFET makes further miniaturization of transistors possible sustaining Moore's law in future. Therefore, CNFETs have been reconnoitered as the stimulating aspirant for the future generations of integrated circuit (IC) devices.The proposed CNFET based three-stage op amp is designed and simulated at 32nm technology node using HSPICE software.
